IRFBC30ASTRLPBF View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

View to exact match

IRFBC30ASTRLPBF

Power MOSFET

Vishay Semiconductors 

IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC30AL

Vishay Siliconix

10000

1000

100

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

Coss

10

Crss

1

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

100

10

TJ = 150° C

TJ = 25° C

1

0.1

0.4

VGS = 0 V

0.6

0.8

1.0

1.2

VSD ,Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

20

ID = 3.6A

16

12

VDS = 480V

VDS = 300V

VDS = 120V

8

4

FOR TEST CIRCUIT

SEE FIGURE 13

0

0

4

8

12

16

20

24

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

10

10us

100us

1

1ms

TC = 25°C

TJ = 150°C

Single Pulse

0.1

10

100

10ms

1000

VDS , Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

10000

www.vishay.com

4

Document Number: 91109

S-81412-Rev. A, 07-Jul-08

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