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IRFBC30AL View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
IRFBC30AL
Vishay
Vishay Semiconductors Vishay
IRFBC30AL Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC30AL
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)a
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
MAX.
40
1.7
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mAd
VDS = VGS, ID = 250 µA
VGS = ± 30 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 2.2 Ab
VDS = 50 V, ID = 2.2 A
600
-
-
V
-
0.67
-
V/°C
2.0
-
4.5
V
-
-
± 100 nA
-
-
25
µA
-
-
250
-
-
2.2
Ω
2.1
-
-
S
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Coss eff.
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
-
VGS = 0 V,
VDS = 25 V,
-
f = 1.0 MHz, see fig. 5
-
VDS = 1.0 V, f = 1.0 MHz
-
VGS = 0 V VDS = 480 V, f = 1.0 MHz
-
VDS = 0 V to 480 Vc
-
-
VGS = 10 V
ID = 3.6 A, VDS = 480 V,
see fig. 6 and 13b
-
-
-
VDD = 300 V, ID = 3.6 A,
-
RG = 12 Ω, RD = 82 Ω, see fig. 10b, d
-
-
510
-
70
-
3.5
-
pF
730
-
19
-
31
-
-
23
-
5.4
nC
-
11
9.8
-
13
-
ns
19
-
12
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
ISM
integral reverse
p - n junction diode
D
G
S
-
-
3.6
A
-
-
14
Body Diode Voltage
VSD
TJ = 25 °C, IS = 3.6 A, VGS = 0 Vb
-
-
1.6
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
400
600
ns
TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/µsb,
Qrr
-
1.1
1.7
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
d. Uses IRFBC30A/SiHFBC30A data and test conditions.
www.vishay.com
2
Document Number: 91109
S-81412-Rev. A, 07-Jul-08
 

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