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IRF9Z34STRLPBF View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
IRF9Z34STRLPBF
Vishay
Vishay Semiconductors Vishay
IRF9Z34STRLPBF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
- 18
A
-
-
- 72
Body Diode Voltage
VSD
TJ = 25 °C, IS = - 18 A, VGS = 0 Vb
-
-
- 6.3
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
trr
-
TJ = 25 °C, IF = - 18 A, dI/dt = 100 A/µsb, c
100
200
ns
Qrr
-
280 520 nC
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
c. Uses IRF9Z34/SiHF9Z34 data and test conditions.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Document Number: 91093
S-Pending-Rev. A, 03-Jun-08
www.vishay.com
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