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IRF9Z34STRR View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
IRF9Z34STRR
Vishay
Vishay Semiconductors Vishay
IRF9Z34STRR Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
TC = 25 °C
TA = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 1.3 mH, RG = 25 Ω, IAS = - 18 A (see fig. 12).
c. ISD - 18 A, dI/dt 170 A/µs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
e. Uses IRF9Z34/SiHF9Z34 data and test conditions.
LIMIT
3.7
88
- 4.5
- 55 to + 175
300d
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)a
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
MAX.
40
1.7
UNIT
W
V/ns
°C
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
Reference to 25 °C, ID = - 1 mAc
VDS = VGS, ID = - 250 µA
VGS = ± 20 V
VDS = - 60 V, VGS = 0 V
VDS = - 48 V, VGS = 0 V, TJ = 150 °C
VGS = - 10 V
ID = - 11 Ab
VDS = - 25 V, ID = - 11 Ac
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5c
VGS = - 10 V
ID = - 18 A, VDS = - 48 V,
see fig. 6 and 13b, c
VDD = - 30 V, ID = - 18 A,
RG = 12 Ω, RD = 1.5 Ω, see fig. 10b, c
MIN.
- 60
-
- 2.0
-
-
-
-
5.9
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
- 0.06
-
-
-
-
-
-
-
-
- 4.0
± 100
- 100
- 500
0.14
-
V
V/°C
V
nA
µA
Ω
S
1100
-
620
-
pF
100
-
-
34
-
9.9
nC
-
16
18
-
120
-
ns
20
-
58
-
www.vishay.com
2
Document Number: 91093
S-Pending-Rev. A, 03-Jun-08
 

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