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IRFB4110QPBF View Datasheet(PDF) - International Rectifier

Part Name
Description
View to exact match
IRFB4110QPBF
IR
International Rectifier IR
IRFB4110QPBF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFB4110QPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
100 ––– –––
––– 0.108 –––
––– 3.7 4.5
2.0 ––– 4.0
––– ––– 20
––– ––– 250
––– ––– 100
V VGS = 0V, ID = 250µA
d V/°C Reference to 25°C, ID = 5mA
g mVGS = 10V, ID = 75A
V VDS = VGS, ID = 250µA
µA VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
160 ––– –––
––– 150 210
––– 35 –––
––– 43 –––
S VDS = 50V, ID = 75A
nC ID = 75A
g VDS = 50V
VGS = 10V
RG
Gate Resistance
––– 1.3 –––
td(on)
Turn-On Delay Time
––– 25 –––
tr
Rise Time
––– 67 –––
td(off)
Turn-Off Delay Time
––– 78 –––
tf
Fall Time
––– 88 –––
Ciss
Input Capacitance
––– 9620 –––
Coss
Output Capacitance
––– 670 –––
Crss
Reverse Transfer Capacitance
––– 250 –––
i Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 820 –––
h Coss eff. (TR) Effective Output Capacitance (Time Related)
––– 950 –––
ns VDD = 65V
ID = 75A
g RG = 2.6
VGS = 10V
pF VGS = 0V
VDS = 50V
ƒ = 1.0MHz
j VGS = 0V, VDS = 0V to 80V
h VGS = 0V, VDS = 0V to 80V
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
Ãdi (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™ ––– ––– 170 A MOSFET symbol
D
showing the
––– ––– 670
integral reverse
G
––– ––– 1.3
g p-n junction diode.
V TJ = 25°C, IS = 75A, VGS = 0V
S
––– 50 75 ns TJ = 25°C
VR = 85V,
––– 60 90
TJ = 125°C
––– 94 140 nC TJ = 25°C
g IF = 75A
di/dt = 100A/µs
––– 140 210
TJ = 125°C
––– 3.5 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction † Coss eff. (TR) is a fixed capacitance that gives the same charging time
temperature. Package limitation current is 75A.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.074mH
as Coss while VDS is rising from 0 to 80% VDSS.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
RG = 25, IAS = 75A, VGS =10V. Part not recommended for use
above this value.
mended footprint and soldering techniques refer to application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C.
„ ISD 75A, di/dt 630A/µs, VDD V(BR)DSS, TJ 175°C.
… Pulse width 400µs; duty cycle 2%.
2
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