IRFB3207PBF View Datasheet(PDF) - International Rectifier
Part Name
Description
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IRFB3207PBF Datasheet PDF : 12 Pages
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IRF/B/S/SL3207PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG
Gate Input Resistance
Min. Typ. Max. Units
Conditions
75 ––– –––
––– 0.069 –––
––– 3.6 4.5
2.0 ––– 4.0
V VGS = 0V, ID = 250µA
d V/°C Reference to 25°C, ID = 1mA
g mΩ VGS = 10V, ID = 75A
V VDS = VGS, ID = 250µA
––– ––– 20 µA VDS = 75V, VGS = 0V
––– ––– 250
VDS = 75V, VGS = 0V, TJ = 125°C
––– ––– 200 nA VGS = 20V
––– ––– -200
VGS = -20V
––– 1.2 ––– Ω f = 1MHz, open drain
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
150 ––– –––
Qg
Total Gate Charge
––– 180 260
Qgs
Gate-to-Source Charge
––– 48 –––
Qgd
Gate-to-Drain ("Miller") Charge
––– 68 –––
td(on)
Turn-On Delay Time
––– 29 –––
tr
Rise Time
––– 120 –––
td(off)
Turn-Off Delay Time
––– 68 –––
tf
Fall Time
––– 74 –––
Ciss
Input Capacitance
––– 7600 –––
Coss
Output Capacitance
––– 710 –––
Crss
Reverse Transfer Capacitance
––– 390 –––
ià Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 920 –––
h Coss eff. (TR) Effective Output Capacitance (Time Related)
––– 1010 –––
S VDS = 50V, ID = 75A
nC ID = 75A
g VDS = 60V
VGS = 10V
ns VDD = 48V
ID = 75A
g RG = 2.6Ω
VGS = 10V
pF VGS = 0V
VDS = 50V
ƒ = 1.0MHz
j VGS = 0V, VDS = 0V to 60V , See Fig.11
h VGS = 0V, VDS = 0V to 60V , See Fig. 5
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
Ãdi (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 170 A MOSFET symbol
D
showing the
––– ––– 720
integral reverse
G
p-n junction diode.
S
––– ––– 1.3
g V TJ = 25°C, IS = 75A, VGS = 0V
––– 42 63 ns TJ = 25°C
VR = 64V,
––– 49 74
TJ = 125°C
––– 65 98 nC TJ = 25°C
g IF = 75A
di/dt = 100A/µs
––– 92 140
TJ = 125°C
––– 2.6 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable junction Coss eff. (TR) is a fixed capacitance that gives the same charging time
temperature. Package limitation current is 75A.
as Coss while VDS is rising from 0 to 80% VDSS.
Repetitive rating; pulse width limited by max. junction
Coss eff. (ER) is a fixed capacitance that gives the same energy as
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.33mH
RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use
above this value.
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended
footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
ISD ≤ 75A, di/dt ≤ 500A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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