datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

IRFB9N65APBF View Datasheet(PDF) - International Rectifier

Part Name
Description
View to exact match
IRFB9N65APBF
IR
International Rectifier IR
IRFB9N65APBF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFB9N65APbF
2000
1600
1200
800
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
400
Crss
0
A
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 5.2A
16
12
VDS = 450200VV
VDS = 325V
VDS = 130V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
50
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 150° C
1
TJ = 25° C
0.1
0.2
VGS = 0 V
0.4
0.6
0.8
1.0
1.2
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
10
100us
1ms
1
10ms
TC = 25°C
TJ = 150°C
Single Pulse
0.1
10
100
1000
VDS , Drain-to-Source Voltage (V)
10000
Fig 8. Maximum Safe Operating Area
www.irf.com
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]