IRFB4228PBF View Datasheet(PDF) - International Rectifier

Part Name

Description

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IRFB4228PBF

PDP SWITCH

International Rectifier 

IRFB4228PbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BVDSS

Drain-to-Source Breakdown Voltage

150 ––– ––– V VGS = 0V, ID = 250µA

∆ΒVDSS/∆TJ

RDS(on)

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

––– 150 ––– mV/°C Reference to 25°C, ID = 1mA

––– 12 15 mΩ VGS = 10V, ID = 33A e

VGS(th)

Gate Threshold Voltage

3.0 ––– 5.0

V VDS = VGS, ID = 250µA

∆VGS(th)/∆TJ

Gate Threshold Voltage Coefficient

––– -14 ––– mV/°C

IDSS

Drain-to-Source Leakage Current

––– ––– 20 µA VDS = 150V, VGS = 0V

––– ––– 1.0 mA VDS = 150V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

––– ––– 100 nA VGS = 20V

Gate-to-Source Reverse Leakage

––– ––– -100

VGS = -20V

gfs

Forward Transconductance

170 ––– ––– S VDS = 25V, ID = 50A

Qg

Total Gate Charge

––– 72 110 nC VDD = 120V, ID = 50A, VGS = 10Ve

Qgd

Gate-to-Drain Charge

––– 26 –––

tst

Shoot Through Blocking Time

100 ––– ––– ns VDD = 120V, VGS = 15V, RG= 5.1Ω

EPULSE

Energy per Pulse

––– 58 –––

L = 220nH, C= 0.3µF, VGS = 15V

µJ VDS = 120V, RG= 5.1Ω, TJ = 25°C

––– 110 –––

L = 220nH, C= 0.3µF, VGS = 15V

VDS = 120V, RG= 5.1Ω, TJ = 100°C

Ciss

Input Capacitance

––– 4530 –––

VGS = 0V

Coss

Output Capacitance

––– 550 ––– pF VDS = 25V

Crss

Reverse Transfer Capacitance

––– 100 –––

ƒ = 1.0MHz

Coss eff.

Effective Output Capacitance

––– 480 –––

VGS = 0V, VDS = 0V to 120V

LD

Internal Drain Inductance

––– 4.5 –––

Between lead,

D

nH 6mm (0.25in.)

LS

Internal Source Inductance

––– 7.5 –––

from package

G

and center of die contact

S

Avalanche Characteristics

Parameter

EAS

EAR

VDS(Avalanche)

IAS

Single Pulse Avalanche Energyd

Repetitive Avalanche Energy c

Repetitive Avalanche Voltage c

Avalanche Current d

Typ.

Max.

Units

–––

120

mJ

–––

33

mJ

180

–––

V

–––

50

A

Diode Characteristics

Parameter

IS @ TC = 25°C Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) c

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

Min.

–––

–––

–––

–––

–––

Typ.

–––

–––

–––

76

230

Max. Units

Conditions

83

MOSFET symbol

A showing the

330

integral reverse

p-n junction diode.

1.3

V TJ = 25°C, IS = 50A, VGS = 0V e

110 ns TJ = 25°C, IF = 50A, VDD = 50V

350 nC di/dt = 100A/µs e

2

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