IRFB4227PBF View Datasheet(PDF) - International Rectifier

Part Name

Description

View to exact match

IRFB4227PBF

PDP SWITCH

International Rectifier 

IRFB4227PbF

+

‚

-



RG

D.U.T

+

Driver Gate Drive

P.W.

Period

D=

P.W.

Period

ƒ

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance

Current Transformer

-„ +

D.U.T. ISD Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. VDS Waveform Diode Recovery

dv/dt

• di/dt controlled by RG

• Driver same type as D.U.T.

VDD

+

• ISD controlled by Duty Factor "D"

-

• D.U.T. - Device Under Test

Re-Applied

Voltage

Body Diode

IInndduuccttoorr CCuurrernetnt

Forward Drop

Ripple ≤ 5%

* VGS=10V

VDD

ISD

* VGS = 5V for Logic Level Devices

Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs

15V

VDS

L

DRIVER

RG

2V0GVS

tp

D.U.T

IAS

0.01Ω

+

- VDD

A

Fig 19a. Unclamped Inductive Test Circuit

V(BR)DSS

tp

IAS

Fig 19b. Unclamped Inductive Waveforms

L

VCC

DUT

0

1K

Fig 20a. Gate Charge Test Circuit

Id

Vds

Vgs

Vgs(th)

Qgs1 Qgs2 Qgd

Qgodr

Fig 20b. Gate Charge Waveform

6

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