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IRF634NLPBF View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
IRF634NLPBF
Vishay
Vishay Semiconductors Vishay
IRF634NLPBF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Dynamic
Internal Drain Inductance
LD
Internal Source Inductance
LS
Drain-Source Body Diode Characteristics
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
-
4.5
-
nH
-
7.5
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
8.0
A
-
-
32
Body Diode Voltage
VSD
TJ = 25 °C, IS = 4.8 A, VGS = 0 Vb
-
-
1.3
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
-
130
200
ns
TJ = 25 °C, IF = 4.8 A, dI/dt = 100 A/µsb
-
650 980 nC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
102
VGS
Top 15 V
10 V
8.0 V
10
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
1
4.5 V
0.1
10-2
0.1
20 µs Pulse Width
TC = 25 °C
1
10
102
91033_01
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
102
Top
VGS
15 V
10 V
8.0 V
7.0 V
10
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
1
4.5 V
0.1
0.1
20 µs Pulse Width
TC = 175 °C
1
10
102
91033_02
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
Document Number: 91033
S-Pending-Rev. A, 19-Jun-08
www.vishay.com
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