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IRF634NSTRLPBF View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
IRF634NSTRLPBF
Vishay
Vishay Semiconductors Vishay
IRF634NSTRLPBF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
TC = 25 °C
TA = 25 °C
PD
Peak Diode Recovery dV/dt
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torqued
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Starting TJ = 25 °C, L = 9.5 mH, RG = 25 Ω, IAS = 4.8 A, VGS = 10 V.
c. 1.6 mm from case.
d. This is only applied to TO-220 package.
e. This is applied to D2PAK, when mounted 1" square PCB (FR-4 or G-10 material).
LIMIT
88
3.8
7.3
- 55 to + 175
300c
10
1.1
UNIT
W
V/ns
°C
lbf · in
N·m
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
Maximum Junction-to-Ambienta
Maximum Junction-to-Ambient
(PCB Mount)b
Maximum Junction-to-Case (Drain)
Case-to-Sink, Flat, Greased Surfacea
RthJA
RthJA
RthJC
RthCS
-
-
-
0.50
Notes
a. This is only applied to TO-220 package.
b. This is applied to D2PAK, when mounted 1" square PCB (FR-4 or G-10 material).
MAX.
62
40
1.7
-
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 250 V, VGS = 0 V
VDS = 200 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 4.8 Ab
VDS = 50 V, ID = 4.8 Ab
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 4.8 A, VDS = 200 V,
see fig. 6 and 13b
VDD = 125 V, ID = 4.8 A,
RG = 1.3 Ω, see fig. 10b
MIN.
250
-
2.0
-
-
-
-
5.4
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
0.33
-
V/°C
-
4.0
V
-
± 100 nA
-
25
µA
-
250
-
0.435 Ω
-
-
S
620
-
84
-
pF
23
-
-
34
-
6.5
nC
-
16
8.4
-
16
-
ns
28
-
15
-
www.vishay.com
2
Document Number: 91033
S-Pending-Rev. A, 19-Jun-08
 

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