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IRF634NSTRRPBF View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
IRF634NSTRRPBF
Vishay
Vishay Semiconductors Vishay
IRF634NSTRRPBF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
250
VGS = 10 V
34
6.5
16
Single
0.435
I2PAK (TO-262)
TO-220
D
D2PAK (TO-263)
GD
S
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220
IRF634NPbF
Lead (Pb)-free
SiHF634N-E3
SnPb
IRF634N
SiHF634N
Note
a. See device orientation.
D2PAK (TO-263)
IRF634NSPbF
SiHF634NS-E3
IRF634NS
SiHF634NS
FEATURES
• Advanced Process Technology
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Fifth generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
The through-hole version (IRF634NL/SiHF634NL) is
available for low-profile application.
D2PAK (TO-263)
IRF634NSTRLPbFa
SiHF634NSTL-E3a
IRF634NSTRLa
SiHF634NSTLa
D2PAK (TO-263)
IRF634NSTRRPbFa
SiHF634NSTR-E3a
IRF634NSTRRa
SiHF634NSTRa
I2PAK (TO-262)
IRF634NLPbF
SiHF634NL-E3
-
-
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VDS
VGS
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energyb
EAS
Avalanche Currenta
IAR
Repetiitive Avalanche Energya
EAR
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91033
S-Pending-Rev. A, 19-Jun-08
WORK-IN-PROGRESS
LIMIT
250
± 20
8.0
5.6
32
0.59
110
4.8
8.8
UNIT
V
A
W/°C
mJ
A
mJ
www.vishay.com
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