IRF1010NSPBF View Datasheet(PDF) - International Rectifier
Part Name
Description
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IRF1010NSPBF Datasheet PDF : 11 Pages
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IRF1010NS/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
EAS
Single Pulse Avalanche Energy
Min. Typ. Max. Units
55 ––– ––– V
––– 0.058 ––– V/°C
––– ––– 11 mΩ
2.0 ––– 4.0 V
32 ––– ––– S
––– ––– 25 µA
––– ––– 250
––– ––– 100
nA
––– ––– -100
––– ––– 120
––– ––– 19 nC
––– ––– 41
––– 13 –––
––– 76 –––
ns
––– 39 –––
––– 48 –––
––– 4.5 –––
nH
––– 7.5 –––
––– 3210 –––
––– 690 –––
––– 140 ––– pF
––– 1030
250 mJ
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 43A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 43A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 43A
VDS = 44V
VGS = 10V, See Fig. 6 and 13
VDD = 28V
ID = 43A
RG = 3.6Ω
VGS = 10V, See Fig. 10
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
IAS = 4.3A, L = 270µH
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 270µH
RG = 25Ω, IAS = 43A, VGS=10V (See Figure 12)
ISD ≤ 43A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and
represents operation outside rated limits.
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 85 A showing the
integral reverse
G
––– ––– 290
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 43A, VGS = 0V
––– 69 100 ns TJ = 25°C, IF = 43A
––– 220 230 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
This is a calculated value limited to TJ = 175°C .
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Uses IRF1010N data and test conditions.
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
www.irf.com
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