IRF2805 View Datasheet(PDF) - International Rectifier
Part Name
Description
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IRF2805 Datasheet PDF : 9 Pages
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IRF2805
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.06 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance ––– 3.9 4.7 mΩ VGS = 10V, ID = 104A
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V VDS = 10V, ID = 250µA
gfs
Forward Transconductance
91 ––– ––– S VDS = 25V, ID = 104A
IDSS
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 250
µA VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 200 nA VGS = 20V
––– ––– -200
VGS = -20V
Qg
Total Gate Charge
––– 150 230
ID = 104A
Qgs
Gate-to-Source Charge
––– 38 57 nC VDS = 44V
Qgd
Gate-to-Drain ("Miller") Charge
––– 52 78
VGS = 10V
td(on)
Turn-On Delay Time
––– 14 –––
VDD = 28V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 120 ––– ns ID = 104A
––– 68 –––
RG = 2.5Ω
tf
Fall Time
––– 110 –––
VGS = 10V
LD
Internal Drain Inductance
LS
Internal Source Inductance
Between lead,
D
––– 4.5 –––
6mm (0.25in.)
nH
from package
G
––– 7.5 –––
and center of die contact
S
Ciss
Input Capacitance
––– 5110 –––
VGS = 0V
Coss
Output Capacitance
––– 1190 ––– pF VDS = 25V
Crss
Reverse Transfer Capacitance
––– 210 –––
ƒ = 1.0MHz, See Fig. 5
Coss
Output Capacitance
––– 6470 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
––– 860 –––
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance
––– 1600 –––
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting TJ = 25°C, L = 0.08mH
RG = 25Ω, IAS = 104A. (See Figure 12).
ISD ≤ 104A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 175 A showing the
integral reverse
G
––– ––– 700
p-n junction diode.
S
––– ––– 1.3
––– 80 120
––– 290 430
V TJ = 25°C, IS = 104A, VGS = 0V
ns TJ = 25°C, IF = 104A
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
2
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