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IRF2804 View Datasheet(PDF) - International Rectifier

Part Name
Description
View to exact match
IRF2804
IR
International Rectifier IR
IRF2804 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
IRF2804/S/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆ΒVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on) SMD Static Drain-to-Source On-Resistance
RDS(on) TO-220 Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
40 ––– –––
––– 0.031 –––
––– 1.5 2.0
––– 1.8 2.3
2.0 ––– 4.0
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
f mVGS = 10V, ID = 75A
f VGS = 10V, ID = 75A
V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
130 ––– ––– S VDS = 10V, ID = 75A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 40V, VGS = 0V
––– ––– 250
VDS = 40V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
Qg
Total Gate Charge
––– 160 240 nC ID = 75A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
––– 41 62
––– 66 99
f VDS = 32V
VGS = 10V
td(on)
Turn-On Delay Time
––– 13 ––– ns VDD = 20V
tr
Rise Time
––– 120 –––
ID = 75A
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 130 –––
––– 130 –––
f RG = 2.5
VGS = 10V
LD
Internal Drain Inductance
––– 4.5 ––– nH Between lead,
D
LS
Internal Source Inductance
6mm (0.25in.)
––– 7.5 –––
from package
G
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
Diode Characteristics
Parameter
IS
Continuous Source Current
––– 6450 –––
––– 1690 –––
––– 840 –––
––– 5350 –––
––– 1520 –––
––– 2210 –––
and center of die contact
S
pF VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Min. Typ. Max. Units
Conditions
––– ––– 280
MOSFET symbol
D
(Body Diode)
ISM
Pulsed Source Current
Ù (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
A showing the
––– ––– 1080
integral reverse
G
––– ––– 1.3
––– 56 84
––– 67 100
f p-n junction diode.
S
V TJ = 25°C, IS = 75A, VGS = 0V
f ns TJ = 25°C, IF = 75A, VDD = 20V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C,
† Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
‡ This value determined from sample failure population. 100%
L=0.24mH, RG = 25, IAS = 75A, VGS =10V.
tested to this value in production.
Part not recommended for use above this value.
ƒ ISD 75A, di/dt 220A/µs, VDD V(BR)DSS,
TJ 175°C.
„ Pulse width 1.0ms; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the same
ˆ This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
‰ Max RDS(on) for D2Pak and TO-262 (SMD) devices.
charging time as Coss while VDS is rising from 0 to 80%
VDSS.
2
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