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IRF1104STRR View Datasheet(PDF) - International Rectifier

Part NameDescriptionManufacturer
IRF1104STRR HEXFET® Power MOSFET IR
International Rectifier IR
IRF1104STRR Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
IRF1104S/L
5000
4000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
3000
Ciss
2000
1000
0
1
Coss
Crss
10
100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 60A
15
VDS = 32V
VDS = 20V
10
5
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
25
50
75
100
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 175° C
10
1
TJ = 25 ° C
0.1
0.2
VGS = 0 V
0.8
1.4
2.0
2.6
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
1000
100
10us
100us
1ms
10
10ms
TC = 25 °C
TJ = 175° C
Single Pulse
1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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