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IRF247 View Datasheet(PDF) - Intersil

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Description
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IRF247 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
IRF244, IRF245, IRF246, IRF247
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF244
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . VDS
250
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . VDGR
250
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
14
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
8.8
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . IDM
56
Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . PD
125
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.0
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . TL
Package Body for 10s, see TB334 . . . . . . . . . . . . . . . . . .Tpkg
550
-55 to 150
300
260
IRF245
250
250
13
8.0
52
±20
125
1.0
550
-55 to 150
300
260
IRF246
275
275
14
8.8
56
±20
125
1.0
550
-55 to 150
300
260
IRF247
275
275
13
8.0
52
±20
125
1.0
550
-55 to 150
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
300
oC
260
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
IRF244, IRF245
BVDSS VGS = 0V, ID = 250µA
(Figure 10)
250 -
-
V
IRF246, IRF247
275 -
-
V
Gate to Threshold Voltage
Zero-Gate Voltage Drain Current
On-State Drain Current (Note 2)
IRF244, IRF246
VGS(TH) VGS = VDS, ID = 250µA
IDSS VDS = Rated BVDSS, VGS = 0V
VDS
TJ =
= 0.8 x
125oC
Rated
BVDSS,
VGS
=
0V,
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
2.0 - 4.0
V
-
-
25
µA
-
- 250 µA
14
-
-
A
IRF245, IRF247
13
-
-
A
Gate to Source Leakage Current
Drain to Source On-State Resistance (Note 2)
IRF244, IRF246
IGSS VGS = ±20V
rDS(ON) VGS = 10V, ID = 8A, (Figures 8, 9)
-
- ±100 nA
- 0.20 0.28
IRF245, IRF247
- 0.24 0.34
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
gfs VDS 50V, ID = 8A, (Figure 12)
6.7 10
-
S
td(ON) VDD = 125V, ID 14A, RG = 9.1, RL = 8.9-
(Figures 17, 18) MOSFET Switching Times
tr
are Essentially Independent of Operating
-
Temperature
td(OFF)
-
16 24
ns
67 100 ns
53 80
ns
tf
-
49 74
ns
Qg(TOT)
Qgs
Qgd
VGS = 10V, ID = 14A, VDS = 0.8 x Rated
BVDSS, Ig(REF) = 1.5mA,
(Figures 14, 19, 20) Gate Charge is
Essentially Independent of Operating
Temperature
-
39 59
nC
- 6.6 -
nC
-
20
-
nC
5-2
 

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