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009N03L View Datasheet(PDF) - Infineon Technologies

Part Name
Description
View to exact match
009N03L
Infineon
Infineon Technologies Infineon
009N03L Datasheet PDF : 0 Pages
Parameter
Symbol Conditions
IPB009N03L G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
-
C oss
V GS=0 V, V DS=15 V,
f =1 MHz
-
Crss
-
t d(on)
-
tr
V DD=15 V, V GS=10 V,
-
I D=100 A,
t d(off)
R G,ext=1.6 W
-
tf
-
Gate Charge Characteristics5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Gate charge total, sync. FET
Output charge
Q gs
-
Q g(th)
-
Q gd
V DD=15 V, I D=100 A,
-
Q sw
V GS=0 to 4.5 V
-
Qg
-
V plateau
-
Qg
V DD=15 V, I D=100 A,
V GS=0 to 10 V
-
Q g(sync)
V DS=0.1 V,
V GS=0 to 4.5 V
-
Q oss
V DD=15 V, V GS=0 V
-
Reverse Diode
Diode continuous forward current I S
-
T C=25 °C
Diode pulse current
I S,pulse
-
Diode forward voltage
V SD
V GS=0 V, I F=100 A,
T j=25 °C
-
Reverse recovery charge
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
-
5) See figure 16 for gate charge parameter definition
Rev. 1.4
page 3
19000 25000 pF
5700 7600
360
-
26
- ns
14
-
103
-
22
-
50
- nC
28
-
24
-
46
-
110
146
2.9
-V
227
- nC
95
-
148
-
-
180 A
-
1260
0.82
1V
135
- nC
2013-10-02
 

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