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019N06L View Datasheet(PDF) - Infineon Technologies

Part Name
Description
View to exact match
019N06L
Infineon
Infineon Technologies Infineon
019N06L Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
IPB019N06L3 G
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
C rss
V GS=0 V, V DS=30 V,
f =1 MHz
-
21000 28000 pF
-
3300 4400
-
140
-
t d(on)
-
35
- ns
tr
V DD=30 V, V GS=10 V,
-
79
-
t d(off)
I D=100 A, R G=1.6
-
131
-
tf
-
38
-
Gate Charge Characteristics6)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs
-
Q gd
-
Q sw
V DD=30 V, I D=100 A,
V GS=0 to 4.5 V
-
Qg
-
V plateau
-
Q oss
V DD=30 V, V GS=0 V
-
65
- nC
21
-
51
-
125
166
3.1
-V
165
219 nC
Reverse Diode
Diode continous forward current
Diode pulse current
IS
I S,pulse
T C=25 °C
-
-
120 A
-
-
480
Diode forward voltage
V SD
V GS=0 V, I F=100 A,
T j=25 °C
-
0.9
1.2 V
Reverse recovery time
Reverse recovery charge
t rr
V R=30 V, I F=100A,
-
71
- ns
Q rr
di F/dt =100 A/µs
-
87
- nC
6) See figure 16 for gate charge parameter definition
Rev. 2.2
page 3
2009-11-16
 

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