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Description
019N06L View Datasheet(PDF) - Infineon Technologies
Part Name
Description
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019N06L
OptiMOS™3 Power-Transistor
Infineon Technologies
019N06L Datasheet PDF : 9 Pages
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IPB019N06L3 G
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
C
oss
C
rss
V
GS
=0 V,
V
DS
=30 V,
f
=1 MHz
-
21000 28000 pF
-
3300 4400
-
140
-
t
d(on)
-
35
- ns
t
r
V
DD
=30 V,
V
GS
=10 V,
-
79
-
t
d(off)
I
D
=100 A,
R
G
=1.6
Ω
-
131
-
t
f
-
38
-
Gate Charge Characteristics
6)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q
gs
-
Q
gd
-
Q
sw
V
DD
=30 V,
I
D
=100 A,
V
GS
=0 to 4.5 V
-
Q
g
-
V
plateau
-
Q
oss
V
DD
=30 V,
V
GS
=0 V
-
65
- nC
21
-
51
-
125
166
3.1
-V
165
219 nC
Reverse Diode
Diode continous forward current
Diode pulse current
I
S
I
S,pulse
T
C
=25 °C
-
-
120 A
-
-
480
Diode forward voltage
V
SD
V
GS
=0 V,
I
F
=100 A,
T
j
=25 °C
-
0.9
1.2 V
Reverse recovery time
Reverse recovery charge
t
rr
V
R
=30 V,
I
F
=100A,
-
71
- ns
Q
rr
d
i
F
/d
t
=100 A/µs
-
87
- nC
6)
See figure 16 for gate charge parameter definition
Rev. 2.2
page 3
2009-11-16
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