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017N06N View Datasheet(PDF) - Infineon Technologies

Part Name
Description
View to exact match
017N06N
Infineon
Infineon Technologies Infineon
017N06N Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
IPB017N06N3 G
9 Drain-source on-state resistance
R DS(on)=f(T j); I D=100 A; V GS=10 V
3
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
parameter: I D
4
2
max
3.5
1960 µA
3
196 µA
2.5
typ
2
1.5
1
1
0.5
0
-60 -20
20
60 100 140 180
T j [°C]
0
-60 -20
20
60 100 140 180
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
105
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
103
Ciss
104
Coss
103
175 °C
25 °C
175 °C, max
102
25 °C, max
Crss
101
102
101
0
Rev. 2.2
20
40
V DS [V]
100
60
0
page 6
0.5
1
1.5
V SD [V]
2
2009-11-16
 

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