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Description
017N06N View Datasheet(PDF) - Infineon Technologies
Part Name
Description
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017N06N
OptiMOS™3 Power-Transistor
Infineon Technologies
017N06N Datasheet PDF : 9 Pages
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9
IPB017N06N3 G
1 Power dissipation
P
tot
=f(
T
C
)
2 Drain current
I
D
=f(
T
C
);
V
GS
≥
10 V
280
200
240
160
200
120
160
120
80
80
40
40
0
0
0
50
100
150
200
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
limited by on-state
resistance
1 µs
10 µs
4 Max. transient thermal impedance
Z
thJC
=f(
t
p
)
parameter:
D
=
t
p
/
T
10
0
100 µs
10
2
0.5
1 ms
10 ms
0.2
10
1
DC
10
-1
0.1
0.05
10
0
0.02
0.01
10
-1
10
-1
10
0
10
1
V
DS
[V]
single pulse
10
-2
10
2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t
p
[s]
Rev. 2.2
page 4
2009-11-16
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