K03H1202(2013) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
View to exact match
K03H1202
(Rev.:2013)
(Rev.:2013)
Infineon Technologies
K03H1202 Datasheet PDF : 14 Pages
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IKA03N120H2
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction - case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
Unit
4.3
K/W
5.8
62
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage V( B R ) C E S VG E = 0 V , I C = 3 0 0 A
Collector-emitter saturation voltage VC E ( s a t ) VG E = 1 5 V , I C = 3 A
Tj=25C
Tj=150C
VGE = 10V, IC=3A,
Tj=25C
Diode forward voltage
VF
VGE = 0, IF=3A
Tj=25C
Gate-emitter threshold voltage
Zero gate voltage collector current
VGE(th)
ICES
Tj=150C
IC=90A,VCE=VGE
VCE=1200V,VGE=0V
Tj=25C
Gate-emitter leakage current
Transconductance
IGES
gfs
Tj=150C
VCE=0V,VGE=20V
VCE=20V, IC=3A
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
LE
measured 5mm (0.197 in.) from case
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=3A
VGE=15V
min.
1200
-
-
-
-
-
2.1
-
-
-
-
-
-
-
-
-
Value
Unit
Typ. max.
-
-V
2.2
2.8
2.5
-
2.4
-
1.55
-
1.6
-
3
3.9
A
-
20
-
80
-
100 nA
2
-S
205
- pF
24
-
7
-
8.6
- nC
7
- nH
Power Semiconductors
2
Rev. 2.3 17.07.2013
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