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G01H1202 View Datasheet(PDF) - Infineon Technologies

Part Name
Description
View to exact match
G01H1202
Infineon
Infineon Technologies Infineon
G01H1202 Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
IGP01N120H2,
IGD01N120H2
IGB01N120H2
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=25°C,
VCC=800V,
IC=1A,
VGE=15V/0V,
RG=241,
Lσ2)=180nH,
Cσ2)=40pF
Energy losses include
“tail” and diode 3)
reverse recovery.
min.
-
-
-
-
-
-
-
Value
Typ.
13
6.3
370
28
0.08
0.06
0.14
Unit
max.
- ns
-
-
-
- mJ
-
-
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=150°C
VCC=800V,
IC=1A,
VGE=15V/0V,
RG=241,
Lσ2)=180nH,
Cσ2)=40pF
Energy losses include
“tail” and diode 3)
reverse recovery.
min.
-
-
-
-
-
-
-
Value
Typ.
12
8.9
450
43
0.11
0.09
0.2
Unit
max.
- ns
-
-
-
- mJ
-
-
Switching Energy ZVT, Inductive Load
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-off energy
Eoff
VCC=800V,
IC=1A,
VGE=15V/0V,
RG=241,
Cr2)=1nF
Tj=25°C
Tj=150°C
min.
Value
typ.
Unit
max.
mJ
-
0.02
-
-
0.044
-
2 ) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E
3) Commutation diode from device IKP01N120H2
Power Semiconductors
3
Rev. 2, Mar-04
 

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