G08T120 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
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G08T120 Datasheet PDF : 12 Pages
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TrenchStop® Series
IGW08T120
q
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJA
Conditions
Max. Value
Unit
1.7
K/W
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VGE(th)
ICES
VGE=0V, IC=0.5mA
VGE = 15V, IC=8A
Tj=25°C
Tj=125°C
Tj=150°C
IC=0.3mA,VCE=VGE
VCE=1200V,
VGE=0V
Tj=25°C
Tj=150°C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=8A
min.
1200
-
-
-
5.0
-
-
-
-
Value
typ.
-
1.7
2.0
2.2
5.8
-
-
-
5
none
Unit
max.
-V
2.2
-
-
6.5
mA
0.2
2.0
100 nA
-S
Ω
Dynamic Characteristic
Input capacitance
Ciss
VCE=25V,
-
600
- pF
Output capacitance
Coss
VGE=0V,
-
36
-
Reverse transfer capacitance
Crss
f=1MHz
-
28
-
Gate charge
QGate
VCC=960V, IC=8A
-
53
- nC
VGE=15V
Internal emitter inductance
LE
-
13
- nH
measured 5mm (0.197 in.) from case
Short circuit collector current1)
IC(SC)
VGE=15V,tSC≤10µs
-
48
-A
VCC = 600V,
Tj = 25°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Rev. 2.6 Nov. 09
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