BDX34C View Datasheet(PDF) - Comset Semiconductors

Part Name

Description

View to exact match

BDX34C

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Comset Semiconductors 

PNP BDX34 – BDX34A – BDX34B – BDX34C

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Max Unit

BDX34 -45 -

-

VCEO(SUS)

Collector-Emitter

Breakdown Voltage (*)

IC=-100 mA

BDX34A -60 -

BDX34B -80 -

-

-

V

BDX34C -100 -

-

BDX34 -45 -

-

VCER(SUS)

Collector-Emitter

Sustaining Voltage (*)

IB=-100 mA

RBE=100Ω

BDX34A -60 -

BDX34B -80 -

-

-

V

BDX34C -100 -

-

BDX34 -45 -

-

VCEV(SUS)

Collector-Emitter

Sustaining Voltage (*)

IC=1-00 mA

VBE=-1.5 V

BDX34A -60 -

BDX34B -80 -

-

-

V

BDX34C -100 -

-

VCB=-22V

BDX34

-

-

VCB=-30V

VCB=-40V

BDX34A -

BDX34B -

-

-

-0.5

ICEO

Collector Cutoff Current

VCB=-50V

VCB=-22V, TC=100°C

BDX34C

BDX34

-

-

-

-

mA

VCB=-30V, TC=100°C BDX34A

-

VCB=-40V, TC=100°C BDX34B

-

-

-

-10

VCB=-50V, TC=100°C BDX34C -

-

BDX34

BDX34A

BDX34B

IEBO

Emitter Cutoff Current VBE=-5 V

BDX34C

BDX34

-

- -5.0 mA

BDX34A

BDX34B

BDX34C

VCBO=-45 V

BDX34

-

-

ICBO

Collector-Base Cutoff

Current

VCBO=-60 V

VCBO=-80 V

BDX34A -

BDX34B -

-

-

-0.2 mA

VCBO=-100 V

BDX34C -

-

23/10/2012

COMSET SEMICONDUCTORS

2/4

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