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BDX34B View Datasheet(PDF) - Comset Semiconductors

Part Name
Description
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BDX34B Datasheet PDF : 4 Pages
1 2 3 4
PNP BDX34 – BDX34A – BDX34B – BDX34C
COMPLEMENTARY SILICON POWER DARLINGTON
TRANSISTORS
The BDX34B, BDX34B and BDX34C are silicon epitaxial-base PNP power transistors in
monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package.
They are intented for use in power linear and switching applications.
The complementary NPN types are the BDX33A, BDX33B and BDX33C respectively.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
Collector-Emitter
Voltage
Ratings
IB=0
VCBO
IC
IB
PT
TJ
TS
Collector-Base Voltage IE=0
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
IC(RMS)
ICM
@ TC = 25°
BDX34
BDX34A
BDX34B
BDX34C
BDX34
BDX34A
BDX34B
BDX34C
Value
-45
-60
-80
-100
-45
-60
-80
-100
-10
-15
-0.25
70
-65 to +150
Unit
V
V
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
Value
1.78
Unit
°C/W
23/10/2012
COMSET SEMICONDUCTORS
1/4
 

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