G20N60C3D View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

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G20N60C3D

45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Fairchild Semiconductor 

HGTG20N60C3D

Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)

PARAMETER

Current Turn-On Delay Time

Current Rise Time

Current Turn-Off Delay Time

Current Fall Time

Turn-On Energy

Turn-Off Energy (Note 3)

Diode Forward Voltage

Diode Reverse Recovery Time

Thermal Resistance Junction To Case

SYMBOL

td(ON)I

trI

td(OFF)I

tfI

EON

EOFF

VEC

trr

RθJC

TEST CONDITIONS

IGBT and Diode at TJ = 150oC

ICE = IC110

VCE = 0.8 BVCES

VGE = 15V

RG = 10Ω

L = 1mH

Test Circuit (Figure 19)

IEC = 20A

IEC = 20A, dIEC/dt = 200A/µs

IEC = 2A, dIEC/dt = 200A/µs

IGBT

Diode

MIN

TYP

MAX UNITS

-

28

32

ns

-

24

28

ns

-

280

450

ns

-

108

210

ns

-

1.0

1.1

mJ

-

1.2

1.7

mJ

-

1.5

1.9

V

-

-

55

ns

-

32

47

ns

-

-

0.76

oC/W

-

-

1.2

oC/W

NOTES:

3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement

of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves Unless Otherwise Specified

50

VGE = 15V

40

30

20

10

0

25

50

75

100

125

150

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

140

TJ = 150oC, RG = 10Ω, VGE = 15V, L = 100µH

120

100

80

60

40

20

0

0

100 200 300 400 500 600 700

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

©2001 Fairchild Semiconductor Corporation

HGTG20N60C3D Rev. B

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