2N6122 View Datasheet(PDF) - Boca Semiconductor
Part Name
Description
View to exact match
2N6122 Datasheet PDF : 2 Pages
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2N6121, 2N6122, 2N6123
2N6124, 2N6125, 2N6126
Collector current
IC
Collector current (Peak)
ICM
Base current
IB
Total power dissipation up to TC = 25°C Ptot
Derate above 25°C
Junction temperature
Tj
Storage temperature
Tstg
THERMAL RESISTANCE
From junction to case
Rth j–c
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IB = 0; VCE = 45 V
IB = 0; VCE = 60 V
IB = 0; VCE = 80 V
VEB(off) = 1.5 V; VCE = 45 V
ICEO
ICEO
ICEO
ICEX
VEB(off) = 1.5 V; VCE = 60 V
ICEX
VEB(off) = 1.5 V; VCE = 85 V
ICEX
VEB(off) = 1.5 V; VCE = 45 V; TC = 125°C
VEB(off) = 1.5 V; VCE = 60 V; TC = 125°C
VEB(off) = 1.5 V; VCE = 80 V; TC = 125°C
mA
IE = 0; VCB = 45 V
ICBO
IE = 0; VCB = 60 V
IE = 0; VCB = 80 V
Emitter cut-off current
ICBO
ICBO
IC = 0; VEB = 5 V
IEBO
Breakdown voltages
IC = 100 mA; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltages
VCEO(sus)*
VCBO
VEBO
IC = 1.5 A; IB = 0.15 A
VCEsat*
IC = 4 A; IB = 1.0 A
Base-emitter on voltage
VCEsat*
IC = 1.5 A; VCE = 2 V
D.C. current gain
VBE(on)*
IC = 1.5 A; VCE = 2 V
hFE*
IC = 4 A; VCE = 2 V
hFE*
Small signal current
IC = 0.1 A; VCE = 2 V; f = 1.0 KHz hfe
Transition frequency at f = 1 MHz
IC = 1 A; VCE = 4 V
fT
* Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%.
max.
max.
max.
max.
max.
max.
4.0
7.0
1.0
40
320
150
–65 to +150
A
A
A
W
mW/°C
°C
ºC
3.12
°C/W
6121 6122 6123
6124 6125 6126
max. 1.0 –
max. – 1.0
max. – –
max. 0.1 –
max. – 0.1
max. – –
ICEXmax. 2.0
ICEXmax. –
ICEXmax. –
– mA
– mA
1.0 mA
– mA
– mA
0.1 mA
– – mA
2.0 – mA
– 2.0
max. 0.1 – – mA
max. – 0.1 – mA
max. – – 0.1 mA
max.
1.0
mA
min. 45 60 80 V
min. 45 60 80 V
min.
5.0
V
max.
0.6
V
max.
1.4
V
max.
1.2
V
min. 25 25 20
max.100 100 80
min. 10 10 7.0
min.
25
min.
2.5
MHz
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