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HYB3117805 View Datasheet(PDF) - Siemens AG

Part Name
Description
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HYB3117805 Datasheet PDF : 23 Pages
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HYB 5(3)117805/BSJ-50/-60
2M × 8 EDO-DRAM
AC Characteristics 5, 6
TA = 0 to 70 °C, VCC = 5 V ± 10 % / VCC = 3.3 V ± 0.3 V, tT = 2 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
min. max. min. max.
Common Parameters
Random read or write cycle time
tRC
RAS precharge time
tRP
RAS pulse width
tRAS
CAS pulse width
tCAS
Row address setup time
tASR
Row address hold time
tRAH
Column address setup time
tASC
Column address hold time
tCAH
RAS to CAS delay time
tRCD
RAS to column address delay
tRAD
RAS hold time
tRSH
CAS hold time
tCSH
CAS to RAS precharge time
tCRP
Transition time (rise and fall)
tT
Refresh period
tREF
Read Cycle
Access time from RAS
tRAC
Access time from CAS
tCAC
Access time from column address
tAA
OE access time
tOEA
Column address to RAS lead time
tRAL
Read command setup time
tRCS
Read command hold time
tRCH
Read command hold time referenced to RAS tRRH
CAS to output in low-Z
tCLZ
Output buffer turn-off delay
tOFF
Output turn-off delay from OE
tOEZ
84 – 104 – ns
30 – 40 – ns
50 10k 60 10k ns
8 10k 10 10k ns
0 – 0 – ns
8 – 10 – ns
0 – 0 – ns
8 – 10 – ns
12 37 14 45 ns
10 25 12 30 ns
13 – 15 – ns
40 – 50 – ns
5 – 5 – ns
1
50 1
50 ns 7
– 32 – 32 ms
50 –
60 ns 8, 9
13 –
15 ns 8, 9
25 –
30 ns 8, 10
– 13 – 15 ns
25 – 30 – ns
0 – 0 – ns
0
0
ns 11
0
0
ns 11
0
0
ns 8
0
13 0
15 ns 12
0
13 0
15 ns 12
Semiconductor Group
6
1998-10-01
 

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