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HYB3117805 View Datasheet(PDF) - Siemens AG

Part Name
Description
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HYB3117805 Datasheet PDF : 23 Pages
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HYB 5(3)117805/BSJ-50/-60
2M × 8 EDO-DRAM
The HYB 5(3)117805 are 16 MBit dynamic RAMs based on the die revisions “G” & “F” and
organized as 2 097 152 words by 8-bits. The HYB 5(3)117805 utilizes a submicron CMOS silicon
gate process technology, as well as advanced circuit techniques to provide wide operating margins,
both internally and for the system user. Multiplexed address inputs permit the HYB 5(3)117805BJ
to be packaged in a standard SOJ-28 plastic packages. Package with 400 mil width are available.
These packages provide high system bit densities and are compatible with commonly used
automatic testing and insertion equipment.
Ordering Information
Type
Ordering Code
HYB 5117805BSJ-50 Q67100-Q1104
HYB 5117805BSJ-60 Q67100-Q1105
HYB 3117805BSJ-50 on request
HYB 3117805BSJ-60 on request
Package
P-SOJ-28-3 400 mil
P-SOJ-28-3 400 mil
P-SOJ-28-3 400 mil
P-SOJ-28-3 400 mil
Descriptions
5 V 50 ns EDO-DRAM
5 V 60 ns EDO-DRAM
3.3 V 50 ns EDO-DRAM
3.3 V 60 ns EDO-DRAM
Pin Names and Configuration
A0 - A10 Row Address Inputs
A0 - A9 Column Address Inputs
RAS
Row Address Strobe
OE
Output Enable
I/O1 - I/O8 Data Input/Output
CAS
Column Address Strobe
WE
Read/Write Input
VCC
Power Supply
+ 5 V for HYB 5117800
+ 3.3 V for HYB 3117805
VSS
N.C.
Ground (0 V)
Not Connected
P-SOJ-28 400 mil
V CC 1
I/O1 2
I/O2 3
I/O3 4
I/O4 5
WE 6
RAS 7
N.C. 8
A10 9
A0 10
A1 11
A2 12
A3 13
V CC 14
28 V SS
27 I/O8
26 I/O7
25 I/O6
24 I/O5
23 CAS
22 OE
21 A9
20 A8
19 A7
18 A6
17 A5
16 A4
15 V SS
SPP02803
Semiconductor Group
2
1998-10-01
 

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