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HUFA76407D3ST View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
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HUFA76407D3ST Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
HUFA76407D3, HUFA76407D3S
Typical Performance Curves (Continued)
100
10
100µs
OPERATION IN THIS
AREA MAY BE
1
LIMITED BY rDS(ON)
1ms
10ms
SINGLE PULSE
TJ = MAX RATED TC = 25oC
0.1
1
10
100 200
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10
STARTING TJ = 150oC
STARTING TJ = 25oC
1
0.001
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
15
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
12 VDD = 15V
9
6
TJ = 25oC
3
TJ = 175oC
0
TJ = -55oC
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
15
VGS = 10V
12 VGS = 5V
VGS = 4V
9
VGS = 3.5V
6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
3
Tc = 25oC
0
VGS = 3V
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
150
ID = 3A
120
ID = 12A
ID = 5A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
90
60
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
0.5
-80
VGS = 10V, ID = 12A
-40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HUFA76407D3, HUFA76407D3S Rev. B
 

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