datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

HMC263LP4E View Datasheet(PDF) - Hittite Microwave

Part Name
Description
View to exact match
HMC263LP4E
Hittite
Hittite Microwave Hittite
HMC263LP4E Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
v01.0709
8
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2)
RF Input Power (RFIN)(Vdd = +3 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 7.7 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+5.5 Vdc
-5 dBm
175 °C
0.7 W
130 °C/W
-65 to +150 °C
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
HMC263LP4E
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE
MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
HMC263LP4E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] 4-Digit lot number XXXX
[2] Max peak reflow temperature of 260 °C
MSL Rating
MSL3 [2]
Package Marking [1]
H263
XXXX
8-6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]