HIN202E, HIN206E, HIN207E, HIN208E, HIN211E, HIN213E, HIN232E
Die Characteristics
METALLIZATION:
Type: Al
Thickness: 10kÅ ±1kÅ
SUBSTRATE POTENTIAL
GND
Metallization Mask Layout
V-
PIN 6
PASSIVATION:
Type: Nitride over Silox
Nitride Thickness: 8kÅ
Silox Thickness: 7kÅ
TRANSISTOR COUNT:
185
PROCESS:
CMOS Metal Gate
HIN232E
C2-
PIN 5
C2+
PIN 4
C1-
PIN 3
T2OUT PIN 7
PIN 2 V+
PIN 1 C1+
R2IN PIN 8
T3OUT PIN 9
R2OUT PIN 10
PIN 11
T2IN
PIN 12 PIN 13
T1IN R1OUT
PIN 14
R1IN
PIN 15
T1OUT
PIN 17 VCC
PIN 16
GND
13
FN4315.16
November 4, 2005