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DF005M View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
DF005M Datasheet PDF : 4 Pages
1 2 3 4
DF005M, DF01M, DF02M, DF04M, DF06M, DF08M, DF10M
www.vishay.com
Vishay General Semiconductor
Miniature Glass Passivated Single-Phase Bridge Rectifiers
~
~
~
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Case Style DFM
PRIMARY CHARACTERISTICS
Package
IF(AV)
VRRM
IFSM
IR
VF at IF = 1.0 A
TJ max.
Diode variations
DFM
1A
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
50 A
5 μA
1.1 V
150 °C
Quad
FEATURES
• UL recognition, file number E54214
• Ideal for printed circuit boards
• Applicable for automative insertion
• High surge current capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for SMPS, lighting ballaster, adapter, battery charger, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
Case: DFM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL DF005M DF01M DF02M DF04M DF06M DF08M DF10M
Device marking code
DF005 DF01 DF02 DF04 DF06 DF08 DF10
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800 1000
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
Maximum DC blocking voltage
VDC
50
100
200
400
600
800 1000
Maximum average forward output rectified current
at TA = 40 °C
IF(AV)
1.0
Peak forward surge current single sine-wave
superimposed on rated load
IFSM
50
Rating for fusing (t < 8.3 ms)
I2t
10
Operating junction and storage temperature range TJ, TSTG
- 55 to + 150
UNIT
V
V
V
A
A
A2s
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL DF005M DF01M DF02M DF04M DF06M DF08M DF10M UNIT
Maximum instantaneous
forward voltage drop per diode
1.0 A
VF
1.1
V
Maximum reverse current at
TA = 25 °C
rated DC blocking voltage per
IR
diode
TA = 125 °C
5.0
μA
500
Typical junction capacitance
per diode
4.0 V, 1 MHz
CJ
25
pF
Revision: 16-Aug-13
1
Document Number: 88571
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 

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