HCF40110BEY View Datasheet(PDF) - STMicroelectronics
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Description
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HCF40110BEY Datasheet PDF : 10 Pages
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HCF40110B
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
Symbol
Parameter
VDD (V)
Test Condition
Value (*)
Unit
Min. Typ. Max.
CLOCK UP/CLOCK DOWN
tW Pulse Width
5
10
15
fCL Maximum Frequency
5
10
15
tWC Carry Pulse Width
5
10
15
tWB Borrow Pulse Width
5
10
15
RESET
85
35
ns
15
2.5
5
MHz
8
225
100
ns
70
260
110
ns
80
tPLH Propagation Delay Time
5
tPHL Reset to Clock
10
15
750
285
ns
200
Delay from Reset to First
5
Allowable Clock
10
300
125
ns
15
75
tW Pulse Width
5
10
150
60
ns
15
40
(*) Typical temperature coefficient for all VDD value is 0.3 %/°C.
NOTE : Measured at the point of 10% change in output load of 50pF, RL = 1KΩ to VDD for tPZL, tPLZ and RL = 1KΩ to VSS for tPHZ
TEST CIRCUIT
CL = 50pF or equivalent (includes jig and probe capacitance)
RL = 200KΩ
RT = ZOUT of pulse generator (typically 50Ω)
7/10
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