HAF1004 View Datasheet(PDF) - Renesas Electronics

Part Name

Description

View to exact match

HAF1004

Silicon P Channel MOS FET Series Power Switching

Renesas Electronics 

HAF1004(L), HAF1004(S)

Gate to Source Voltage vs.

Shutdown Time of Load-Short Test

–20

–16

–12

V DD= –16 V

–8

–24V

–4

0

0.0001 0.001

0.01

0.1

Shutdown Time of Lord-Short Test

Pw (S)

Shutdown Case Temperature vs.

Gate to Source Voltage

200

180

160

140

120

I D = –0.5 A

100

0

–2 –4 –6 –8 –10

Gate to Source Voltage VGS (V)

Normalized Transient Thermal Impedance vs. Pulse Width

3

1

D=1

Tc = 25˚C

0.5

0.3

0.2

0.1 0.1

0.05

0.03

0.02

0.011shot

pulse

0.01

10 m

100 m

θch – c(t) = γ s (t) • θch – c

θch – c = 6.25˚C/W, Tc = 25˚C

PDM

PW

T

D=

PW

T

1m

10 m

100 m

1

10

Pulse Width PW (S)

Rev.5.00, Apr.29.2003, page 7 of 10

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