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GMS82524TK View Datasheet(PDF) - Hynix Semiconductor

Part Name
Description
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GMS82524TK
Hynix
Hynix Semiconductor Hynix
GMS82524TK Datasheet PDF : 93 Pages
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HYUNDAI MicroElectronics
GMS82512/16/24
Specifications
Parameter
Symbol
Min.
Typ.1
Max.
fXIN=4MHz fXIN=8MHz
Unit
Analog Power Supply Input Range
AVDD
0.9VDD
VDD
1.1VDD
V
1. Data in “Typ” column is at 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.
7.4 DC Electrical Characteristics
(TA=-20~85°C, VDD=2.7~5.5V, Ta= -20~85°C, fXIN=8MHz, VSS=0V),
Parameter
Symbol
Condition
Specifications
Unit
Min.
Typ.1
Max.
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Power Fail Detect
Voltage
Input High
Leakage Current
VIH1
VIH2
VIL1
VIL2
VOH
VOL
VPFD
IIH1
VDD=4.5
VDD=2.7
XIN, RESET,
R4, R5, R6
R0, R2, R3
VDD=4.5
VDD=2.7
XIN, RESET,
R4, R5, R6
R0, R2, R3
VDD=4.5
VDD=2.7
R0,R2,R3,R4,R5
R6
IOH1=-2mA
VDD=4.5
VDD=2.7
IOL1=5mA
R0,R2,R3,R4,R5
R6
VPFD=3.0V
VPFD=2.4V
@ TA=25°C
VIN=VDD All input pins
0.8VDD
0.7VDD
-
VDD+0.3
V
-
VDD+0.3
-
0.2VDD
V
-
0.3VDD
VDD-1.0
-
-
V
-
-
1.0
V
0.9VPFD
1.1VPFD
V
-5.0
-
5.0
µA
Input Low
Leakage Current
IIL
VIN=VSS
All input pins
-5.0
-
5.0
µA
Hysteresis
VT+, VT-
RESET, EC0, SIN,
SCLK, INT0~INT3
0.3
0.8
V
Power Current
IDD1 fXIN=8M H z A ll input = V SS
-
Crystal Oscillator,
IDD2 fXIN=4M H z C L1=C L2=30pF@ 8M H z
8
20
mA
4
10
mA
ISTOP
All input = VSS
-
1
10
µA
1. Data in “Typ.” column is at 4.5V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.
FEB. 2000 Ver 1.00
11
 

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