2. Transformer
FSQ0565RS
Rev.0.0
1
Np/2 2
EER3016
10 N14V
9
Np/2 3
8
Na 4
5
7
N5V
6
FSQ0565RS Rev.0.0
Np/2 2
Na 4
N5V 7
N5V 8
8
N14V 10
Np/2
2
3
Figure 40. Transformer Schematic Diagram of FSQ0565RS
3. Winding Specification
Top
1
5
6
6
Bottom
Position
Top
Bottom
No
Pin (s→f)
Wire
Insulation: Polyester Tape t = 0.025mm, 4 Layers
Np/2
2→1
0.4φ × 1
Insulation: Polyester Tape t = 0.025mm, 2 Layers
Na
4→5
0.15φ × 1
Insulation: Polyester Tape t = 0.025mm, 2 Layers
N5V
7→6
0.4φ × 3(TIW)
Insulation: Polyester Tape t = 0.025mm, 2 Layers
N5V
8→6
0.4φ × 3(TIW)
Insulation: Polyester Tape t = 0.025mm, 2 Layers
N14V/2
10 → 8
0.4φ × 3(TIW)
Insulation: Polyester Tape t = 0.025mm, 2 Layers
Np/2
3→2
0.4φ × 1
Turns
Winding Method
10 Center Solenoid Winding
7
Center Solenoid Winding
3
Solenoid Winding
3
Solenoid Winding
5
Solenoid Winding
32 Two-Layer Solenoid Winding
4. Electrical Characteristics
Inductance
Leakage
Pin
Specification
Remarks
1-3
600µH ± 10%
67kHz, 1V
1-3
15µH Maximum
Short all other pins
5. Core & Bobbin
! Core: EER3016 (Ae=109.7mm2)
! Bobbin: EER3016
© 2008 Fairchild Semiconductor Corporation
FSQ0565RS/RQ Rev. 1.0.3
19
www.fairchildsemi.com