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Q0565R_07(2007) View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
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Q0565R_07 Datasheet PDF : 22 Pages
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Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. TA = 25°C, unless otherwise specified.
Symbol
Parameter
Min.
Max.
Unit
Vstr
VDS
VCC
VFB
VSync
IDM
Vstr Pin Voltage
Drain Pin Voltage
Supply Voltage
Feedback Voltage Range
Sync Pin Voltage
Drain Current Pulsed
FSQ0565R
FSQ0765R
500
V
650
V
20
V
-0.3
13
V
-0.3
11
V
11
A
15
A
FSQ0565R TC = 25°C
ID
Continuous Drain Current(6)
FSQ0765R
TC = 100°C
TC = 25°C
TC = 100°C
2.8
A
1.7
3.8
A
2.4
EAS
Single Pulsed Avalanche
Energy(7)
FSQ0565R
FSQ0765R
190
mJ
370
mJ
PD
Total Power Dissipation(Tc=25oC)
45
W
TJ
Operating Junction Temperature
Internally limited
°C
TA
Operating Ambient Temperature
-25
+85
°C
TSTG
Storage Temperature
-55
+150
°C
Electrostatic Discharge Capability, Human Body Model
2.0
kV
ESD
Electrostatic Discharge Capability, Charged Device Model
2.0
kV
Notes:
6. Repetitive rating: Pulse width limited by maximum junction temperature.
7. L=14mH, starting TJ=25°C.
Thermal Impedance
TA = 25°C unless otherwise specified.
Symbol
θJA
θJC
Parameter
Junction-to-Ambient Thermal Resistance(8)
Junction-to-Case Thermal Resistance(9)
Notes:
8. Free standing with no heat-sink under natural convection.
9. Infinite cooling condition - refer to the SEMI G30-88.
Package
TO-220F-6L
Value
50
2.8
Unit
°C/W
°C/W
© 2007 Fairchild Semiconductor Corporation
FSQ0565R, FSQ0765R Rev. 1.0.0
5
www.fairchildsemi.com
 

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