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FQPF7N20L View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FQPF7N20L
Fairchild
Fairchild Semiconductor Fairchild
FQPF7N20L Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Typical Characteristics
Top :
101
V
GS
10 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
100
10-1
10-1
Notes :
1. 250μs Pulse Test
2. T = 25
C
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
4
3
V = 5V
GS
V = 10V
GS
2
1
Note : TJ = 25
0
0
3
6
9
12
15
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
800
600
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
Ciss
400
Coss
Notes :
1. V = 0 V
GS
200
2. f = 1 MHz
C
rss
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
101
100
150
25
10-1
0
-55
Notes :
1. VDS = 30V
2. 250μs Pulse Test
2
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
15025
Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
VDS = 40V
8
VDS = 100V
V = 160V
DS
6
4
2
Note : ID = 6.5 A
0
0
3
6
9
12
15
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A2, December 2000
 

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