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FQPF5N50CYDTU View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FQPF5N50CYDTU
Fairchild
Fairchild Semiconductor Fairchild
FQPF5N50CYDTU Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
500 --
ID = 250 µA, Referenced to 25°C -- 0.5
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
--
--
--
--
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
2.0
VGS = 10 V, ID = 2.5A
--
VDS = 40 V, ID = 2.5A
(Note 4) --
--
1.14
5.2
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 480
-- 80
-- 15
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 250 V, ID = 5A,
RG = 25
-- 12
-- 46
-- 50
(Note 4, 5)
--
48
VDS = 400 V, ID = 5A,
-- 18
VGS = 10 V
-- 2.2
(Note 4, 5) --
9.7
--
--
1
10
100
-100
4.0
1.4
--
625
105
20
35
100
110
105
24
--
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
5
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
20
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 5 A
--
--
1.4
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 5 A,
-- 263
--
ns
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4) --
1.9
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 21.5 mH, IAS = 5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 5A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
©2003 Fairchild Semiconductor Corporation
Rev. A, April 2003
 

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