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FQPF4N90C View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FQPF4N90C
Fairchild
Fairchild Semiconductor Fairchild
FQPF4N90C Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Typical Characteristics
101 Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
100 Bottom : 5.5 V
10-1
10-2
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
10
8
V = 10V
GS
6
4
VGS = 20V
2
Note : T = 25
J
0
2
4
6
8
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1200
1000
800
600
400
200
0
10-1
C
iss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Coss
C
rss
Notes ;
1. V = 0 V
GS
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
101
150oC
100
25oC
-55oC
10-1
2
Notes :
1. V = 50V
DS
2. 250μ s Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
101
100
150
25
Notes :
1. VGS = 0V
2. 250μ s Pulse Test
10-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 180V
DS
10
V = 450V
DS
V = 720V
DS
8
6
4
2
Note : ID = 4A
0
0
5
10
15
20
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, June 2003
 

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