FQPF3N90_NL View Datasheet(PDF) - Fairchild Semiconductor
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FQPF3N90_NL Datasheet PDF : 9 Pages
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Typical Characteristics
101
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-2
10-1
Notes :
1. 250s Pulse Test
2. TC = 25
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
12
10
8
VGS = 10V
VGS = 20V
6
4
2
Note : T = 25
J
0
0
1
2
3
4
5
6
7
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
600
500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
400
Coss
300
Notes :
200
1. VGS = 0 V
Crss
2. f = 1 MHz
100
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
101
100
10-1
2
150
25
-55
Notes :
1. VDS = 50V
2. 250s Pulse Test
4
6
8
10
VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150
25
Notes :
1. V = 0V
2. 25GS0s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
VDS = 120V
VDS = 300V
8
VDS = 480V
6
4
2
Note : ID = 3.0 A
0
0
2
4
6
8
10
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, April 2000
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