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FQP55N10 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FQP55N10
Fairchild
Fairchild Semiconductor Fairchild
FQP55N10 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1. VGS = 0 V
2. ID = 250 μA
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
103
Operation in This Area
is Limited by R DS(on)
102
10 µs
100 µs
1 ms
10 ms
101
DC
100
10-1
100
Notes :
1. TC = 25 oC
2. TJ = 175 oC
3. Single Pulse
101
102
V , Drain-Source Voltage [V]
DS
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. ID = 27.5 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
60
50
40
30
20
10
0
25
50
75
100
125
150
175
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs. Case Temperature
100
D =0.5
1 0 -1
0 .2
0 .1
0 .05
0 .02
0 .01
1 0 -2
s in g le p u ls e
N ote s :
1.
Z
θ
(t)
JC
=
0.97
/W
M ax.
2. D u ty F actor, D =t /t
12
3.
T
JM
-
T
C
=
P
DM
*
Z
θ
(t)
JC
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor International
Rev. A, August 2000
 

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