datasheetbank_Logo     データシート検索エンジンとフリーデータシート

FQP55N10 データシートの表示(PDF) - Fairchild Semiconductor

部品番号コンポーネント説明メーカー
FQP55N10 100V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
FQP55N10 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Typical Characteristics
VGS
Top : 15.0 V
102
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
101
100
10-1
Notes :
1. 250μs Pulse Test
2. TC = 25
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
0.12
0.09
V = 10V
GS
0.06
V = 20V
GS
0.03
0.00
0
Note : TJ = 25
60
120
180
240
300
ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
6000
5000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
4000
3000
2000
1000
Ciss
Coss
Crss
Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
102
101
175
25
100
10-1
2
-55
Notes :
1. VDS = 40V
2. 250μs Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100
10-1
0.2
175
0.4
25
Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = 50V
DS
V = 80V
DS
8
6
4
2
Note : ID = 55A
0
0
10
20
30
40
50
60
70
80
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, August 2000
Direct download click here

 

Share Link : 

All Rights Reserved © datasheetbank.com 2014 - 2020 [ 個人情報 保護方針 ] [ リクエストデータシート ]