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FQP4N90 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FQP4N90
Fairchild
Fairchild Semiconductor Fairchild
FQP4N90 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Typical Characteristics
101 Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-1
Notes :
1. 250μ s Pulse Test
2. T = 25
C
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
10
8
VGS = 10V
6
VGS = 20V
4
2
Note : TJ = 25
0
0
3
6
9
12
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1500
1200
900
600
300
C
iss
C
oss
C
rss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
100
10-1
2
150
25
-55
Notes :
1.
2.
V25DS0μ=s50PVulse
Test
4
6
8
10
VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150
25
Notes :
1.
2.
2V5GS0μ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
12
VDS = 180V
10
V = 450V
DS
8
V = 720V
DS
6
4
2
Note : ID = 4.2 A
0
0
5
10
15
20
25
30
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
Rev. B, October 2001
 

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