FQP4N20L View Datasheet(PDF) - Fairchild Semiconductor
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FQP4N20L Datasheet PDF : 8 Pages
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
※ Notes :
1. V = 0 V
GS
2. I = 250 μA
D
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
101
100
10-1
100
Operation in This Area
is Limited by R DS(on)
100 µs
1 ms
10 ms
DC
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
102
V , Drain-Source Voltage [V]
DS
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. V = 10 V
GS
2. I = 1.9 A
D
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 8. On-Resistance Variation
vs. Temperature
4
3
2
1
0
25
50
75
100
125
150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs. Case Temperature
100
1 0 -1
D = 0 .5
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
※ N o te s :
1.
Z
θ
(t)
JC
=
2 .7 8
℃ /W
M ax.
2 . D u ty F a c to r, D = t1/t2
3.
T
JM
-
T
C
=
P
DM
*
Z
θ
(t)
JC
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
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