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FQP3N80C View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FQP3N80C
Fairchild
Fairchild Semiconductor Fairchild
FQP3N80C Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
800 --
ID = 250 µA, Referenced to 25°C --
1
IDSS
Zero Gate Voltage Drain Current
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125°C
--
--
--
--
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
3.0 --
VGS = 10 V, ID = 1.5 A
-- 4.0
VDS = 50 V, ID = 1.5 A
(Note 4) --
3
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 543
-- 54
-- 5.5
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 400 V, ID = 3 A,
--
RG = 25
--
--
(Note 4, 5)
--
VDS = 640 V, ID = 3 A,
--
VGS = 10 V
--
(Note 4, 5) --
15
43.5
22.5
32
13
3.4
5.8
--
--
10
100
100
-100
5.0
4.8
--
705
70
7.5
40
95
55
75
16.5
--
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
3.0
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
12
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 3.0 A
--
--
1.4
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 3.0 A,
-- 642
--
ns
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4) --
4.0
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 67mH, IAS = 3.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 3A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
©2003 Fairchild Semiconductor Corporation
Rev. A, April 2003
 

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