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FQP33N10 View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQP33N10 100V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
FQP33N10 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
 Notes :
1. V =0V
2.
GS
ID =
250
A
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Operation in This Area
is Limited by R
DS(on)
102
100 µs
1 ms
10 ms
101
DC
100
100
 Notes :
1. T = 25 oC
C
2. T = 175 oC
J
3. Single Pulse
101
102
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
 Notes :
1. VGS = 10 V
2. ID = 16.5 A
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 8. On-Resistance Variation
vs. Temperature
35
30
25
20
15
10
5
0
25
50
75
100
125
150
175
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs. Case Temperature
100
D =0 .5
0 .2
1 0 -1
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
 N otes :
1.
Z
(t)
JC
=
1.1 8
 /W
M ax.
2 . D u t y F a c t o r , D = t /t
12
3.
T
JM
-
T
C
=
P
DM
*
Z

(t
JC
)
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t , S q u a re W a v e P u ls e D u ra tio n [s e c ]
1
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor International
Rev. A, April 2000
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