FQP33N10 View Datasheet(PDF) - Fairchild Semiconductor
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FQP33N10 Datasheet PDF : 8 Pages
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Typical Characteristics
102 Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
101
100
10-1
Notes :
1. 250s Pulse Test
2. TC = 25
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
0.20
0.15
0.10
V = 10V
GS
V = 20V
GS
0.05
0.00
0
Note : T = 25
J
20
40
60
80
100
120
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3000
2500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2000
1500
Ciss
Coss
Notes :
1. VGS = 0 V
2. f = 1 MHz
1000
Crss
500
0
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
102
101
175
25
-55
Notes :
1. VDS = 40V
2. 250s Pulse Test
100
2
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
102
101
100
0.2
175
25
Notes :
1. V = 0V
GS
2. 250s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V , Source-Drain voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = 50V
10
DS
V = 80V
DS
8
6
4
2
Note : I = 33A
D
0
0
5
10
15
20
25
30
35
40
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A, April 2000
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